| PART |
Description |
Maker |
| IS61NLF102436A IS61NLF102436A-6.5B3 IS61NLF102436A |
STATE BUS SRAM
1M X 36 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
1M X 36 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100
2M X 18 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
2M X 18 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100
|
Integrated Silicon Solution, Inc.
|
| K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM
256K X 36 ZBT SRAM, 3.5 ns, PQFP100
512K X 18 ZBT SRAM, 3.5 ns, PQFP100
|
Samsung semiconductor
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AS7C33256NTF32_36A AS7C33256NTF32-36A.V.1.1 AS7C33 |
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 10 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 8.5 ns, PQFP100
3.3V 256K x 2/36 Flowthrough Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 36Vz 7mA-Izt 0.05 5uA-Ir 27.4Vr DO41-GLASS 5K/REEL
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CY7C1471V25-100AXC CY7C1473V25-100AXI CY7C1473V25- |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
|
| MT55V1MV18FF-12 MT55V512V36FT-12 MT55V512V36FF-12 |
1M X 18 ZBT SRAM, 9 ns, PBGA165
512K X 36 ZBT SRAM, 9 ns, PQFP100
512K X 36 ZBT SRAM, 9 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| GS8321Z36E-166VT GS8321Z32E-166VT GS8321Z32GE-166V |
1M X 36 ZBT SRAM, 7 ns, PBGA165 15 X 17 MM, 1 MM PITCH, FPBGA-165
1M X 32 ZBT SRAM, 7 ns, PBGA165 15 X 17 MM, 1 MM PITCH, FPBGA-165
1M X 32 ZBT SRAM, 7 ns, PBGA165 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
2M X 18 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| AS7C25512NTF32_36A AS7C25512NTF36A-10TQC AS7C25512 |
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 7.5 ns, PQFP100
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 51Vz 5mA-Izt 0.05 5uA-Ir 38.8Vr DO41-GLASS 5K/AMMO
DIODE, ZENER, 24V, 5%, 1W&
DIODE ZENER SINGLE 1000mW 33Vz 7.5mA-Izt 0.05 5uA-Ir 25.1Vr DO41-GLASS 5K/REEL
NTD? Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS61NP25618-133B2 IS61NP25618-133B2I IS61NP25618-1 |
256K X 18 ZBT SRAM, 4.2 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 3.8 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| AS7C33256NTD32_36A AS7C33256NTD32-36A.V.2.1 AS7C33 |
3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 3.8 ns, PQFP100
3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD 256K X 32 ZBT SRAM, 4.2 ns, PQFP100
3.3V 256K x 2/36 Pipelined burst Synchronous SRAM with NTD 256K X 36 ZBT SRAM, 4.2 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
|
